发明名称 MANUFACTURE OF MESA TYPE SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE: To prevent a crack, a break and a peeling from being generated in a glass protective film when substrates bonded to each other are separated into individual semiconductor elements. CONSTITUTION: Groove parts 4 for separating bonded parts 3 of a P-type semiconductor substrate 1 to an N-type semiconductor substrate 2 into unit elements 5 are formed lengthwise and breadthwise in the upper surface of the substrate 2 with P-type semiconductor regions formed thereon by a means, such as an etching. Then, a glass paste 6 is applied and fired on the upper surface of the substrate 2 and a glass protective film 6a is formed. Then, a resist film 7 is applied and formed on the film 6a excluding the center parts 4a of the bottoms of the groove parts 4 and the region of the upper surface 5a of each unit element 5. After this, the semiconductor substrates are first dipped in a nitric acid solution to remove places, which are not coated with the film 7, of the film 6a and thereafter, the substrates are dipped in a sulfuric acid solution to remove the film 7. The centers of the center parts 4a of the bottoms of the groove parts 4 are diced by a dicer and the substrates are separated into individual diode elements 8.</p>
申请公布号 JPH0864557(A) 申请公布日期 1996.03.08
申请号 JP19940201844 申请日期 1994.08.26
申请人 ROHM CO LTD 发明人 TERAJIMA SHOICHI
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
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