| 摘要 |
PURPOSE: To obtain a method for fabricating a semiconductor device in which Al can be formed at a level difference part with good step coverage. CONSTITUTION: TiN film 3(500Å) is deposited, as a barrier metal, on an Si substrate 1 provided with a contact hole 2a and then TiN film 4(300Å) is deposited by ECR plasma CVD under such conditions that the deposition gas is TiCl4 : 10 sccm, H2: 26sccm, Ar: 75 sccm, the microwave power is 2.8 kW, the substrate temperature is 500 deg.C, and the deposition pressure is 3.0 mTorr. The contact angle(23 deg.) of Al deposited on the Ti by ECR plasma CVD has a significant difference from the contact angle(38 deg.) of Al deposited on the Ti by reactive sputtering and a good wettability is obtained.
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