| 摘要 |
Disclosed is a semiconductor apparatus in which a single-crystalline thin film can be formed on a semiconductor substrate at a low temperature not higher than 800 DEG C. and a method of manufacturing such a semiconductor apparatus. In this semiconductor apparatus and the manufacturing method thereof, a silane gas is supplied onto a single-crystalline silicon substrate under condition of a temperature not higher than approximately 540 DEG C. and an amorphous silicon thin film is formed on a surface of the silicon substrate. At the same time, the amorphous silicon thin film is single-crystallized to form a single crystal silicon thin film, and single crystal silicon thin films are successively epitaxially grown. This enables those single crystal silicon thin films to be formed directly on the surface of the single-crystalline silicon substrate at a temperature lower than or equal to 800 DEG C.
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