| 摘要 |
Disclosed is a semiconductor device having a capacitor of large capacitance. The capacitor includes a first electrode portion which has a conductive structure formed on a semiconductor substrate, an insulating layer with pinholes in the conductive structure, and a conductive silicon layer grown through the pinholes, a second electrode portion on the first electrode portion, and a dielectric film formed between the first and second electrode portions. A method for manufacturing the device includes the steps of forming the first electrode portion by forming the conductive structure, forming the insulating layer, growing a silicon through the pinholes to form a conductive silicon layer, and forming the dielectric film and the second electrode portion. The capacitor can be formed with various shapes and is increased to 1.5 times or greater in capacitance while maintaining reliability comparable to that of a conventional one. |
