| 摘要 |
A field emitter device comprises a dielectric anodic aluminium oxide layer having pores filled with wires the front ends of which constitute individual field emitting cathodes, a gate electrode overlying a front surface of the layer, and an address electrode overlying a back surface of the layer and in electrical contact with the wires. The problem of short circuit between the gate electrode and the field emitter is overcome by cleaning the pore walls adjacent the gate electrode and/or by selectively dissolving the back ends of individual wires.
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