In order to increase the conductivity of gas sensors used for detecting reducing gases, a Ga2O3 layer (A) is applied to a substrate (S) to act as the gas-sensitive layer and tempered at a temperature of between 750 and 850 DEG C to ensure that the Ga2O3 layer is free of acceptors.
申请公布号
WO9605507(A1)
申请公布日期
1996.02.22
申请号
WO1995DE01035
申请日期
1995.08.07
申请人
SIEMENS AKTIENGESELLSCHAFT;HACKER, BIRGITTA;KORNELY, SUSANNE;FLEISCHER, MAXIMILIAN;MEIXNER, HANS
发明人
HACKER, BIRGITTA;KORNELY, SUSANNE;FLEISCHER, MAXIMILIAN;MEIXNER, HANS
