<p>A diamond heat sink of the present invention comprises: a support layer consisting of substantially undoped vapor phase synthetic diamond; a heat sensitive layer consisting of doped vapor phase synthetic diamond formed on the surface of the support layer; an insulation layer consisting of substantially undoped vapor phase synthetic diamond formed on a predetermined region of the heat sensitive layer; and an electrode formed on the heat sensitive layer. The electrode typically consists of a metal, preferably Ti/Mo/Au or Ti/Pt/Au. The diamond heat sink of the present invention may further include a highly-doped layer for creating Ohmic contacts with the metal electrode, which is made of the vapor phase synthetic diamond having high impurity levels, and which is disposed between the metal electrode and the heat sensitive layer. <MATH></p>
申请公布号
EP0697726(A2)
申请公布日期
1996.02.21
申请号
EP19950111873
申请日期
1995.07.27
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人
SHIOMI, HIROMU, C/O ITAMI WORKS OF SUMITOMO;NAKAHATA, HIDEAKI, C/O ITAMI WORKS OF SUMITOMO;NISHIBAYASHI, YOSHIKI, C/O ITAMI WORKS OF SUMITOMO;SHIKATA, SHIN-ICHI, C/O ITAMI WORKS OF SUMITOMO