发明名称 TUNGSTEN SILICIDE TARGET MATERIAL AND ITS PRODUCTION
摘要 PURPOSE:To produce a target material capable of suppressing the generation of particles. CONSTITUTION:This tungsten silicide target material has >=101% relative density and the atomic ratio of Si to W is >2. This target material is obtd. by pulverizing a calcined body and sintering the resultant powder at 1,200-1,400 deg.C under >=110MPa pressure.
申请公布号 JPH0849068(A) 申请公布日期 1996.02.20
申请号 JP19940201398 申请日期 1994.08.03
申请人 HITACHI METALS LTD 发明人 HIRAKI AKITOSHI
分类号 C04B35/58;C23C14/34;H01L21/203 主分类号 C04B35/58
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