| 摘要 |
PURPOSE:To lessen the scattering of brightness or reliability by arranging the constitution such that the width of a double hetero layer is smaller than the widths of other layers, and that the edge of the double hetero layer is indented from the edges of other layers. CONSTITUTION:A double hetero structure of light emitting part is made by stacking an n-type GaAs buffer layer 9, an n-type semiconductor multilayer reflector 8, an n-type clad layer 7, an active layer 6, a p-type clad layer 5 on a GaAs substrate 10 in order, and further a p-type AlGaAs window layer 4, a p-type AlGaInP etching stop layer 3, a p-type GaAs contact layer 2 are stacked. And, the double hetero layer including the active layer 6 is made smaller by 3mum than the upper and lower layers by performing etching in etchant of HCl:H2O=6:4 at 30 deg.C, for removal of the side damage of p layer of the double hetero layer. Hereby, a light emitting diode, which is hardly subjected to the damage to the active layer and is small in dispersion of brightness and high in reliability, can be manufactured. |
