| 摘要 |
<p>PURPOSE:To enable a glass substrate of low cost to be used by a method wherein an amorphous silicon layer is crystallized through a certain crystallizing method carried out at a certain temperature which the glass substrate is capable of withstanding, and the polycrystalline silicon layer of a TFT is formed through the above crystallizing method. CONSTITUTION:An eutectic metal layer 13 (e.g. Al, Sb, Sn, and the like) composed of two elements, amorphous silicon and metal, is formed on the surface of an amorphous silicon layer 12 in a first process, and the amorphous silicon layer 12 is crystallized into a polycrystalline silicon layer 14 by annealing (300 deg.C to 400 deg.C) in a second process. Or, a capping layer is formed on the surface of the metal layer 13, and then an annealing process is carried out. Furthermore, a crystallizing method can be applied to the formation of a polycrystalline silicon layer of a TFT.</p> |
