| 摘要 |
<p>PURPOSE:To improve the processability of the shape of an emitter, and improve the reproducibility, and stabilize electron emission property by forming an emitter on an insulating layer out of a silicon film. CONSTITUTION:A step is made in the silicon oxide layer 34 being the insulating layer on the surface of a silicon substrate 31. On the projection 341 of this insulating layer are an comb-shaped emitter 32 and an anode electrode 35 made of silicon single crystalline films. And, on the surface of the recess 342 of the insulating layer between the emitter 32 and the anode electrode 35 is a gate electrode 33 being a high melting point metal made. And, on the emitter 32 is an emitter pad 372 of an Mo film provide, and on the anode electrode 35 is an upper pad 373 provided. By putting this electron emission element in such structure, the processability and the reproducibility of the shape of the emitter improve. Furthermore, by specifying the crystal azimuth of the single crystal film, the emitter having a sharp edge is made, which stabilizes electron emission property.</p> |
