发明名称 |
THIN FILM TRANSISTOR AND ITS MANUFACTURE AND LIQUID CRYSTAL DISPLAY USING IT |
摘要 |
<p>PURPOSE:To provide a thin film transistor which can reduce the leakage without complicating the process. CONSTITUTION:A thin film transistor is one where a channel part 11 and source and drain regions 12 and 13 are made in the semiconductor film 2 made on a substrate 1, and a gate electrode 4 is made through an insulating film 15 on the channel part 11, and resistance layers 14 and 14 for control of transistor property are provided between the channel region 11 and the source and drain regions 12 and 13.</p> |
申请公布号 |
JPH0851217(A) |
申请公布日期 |
1996.02.20 |
申请号 |
JP19950093886 |
申请日期 |
1995.04.19 |
申请人 |
SANYO ELECTRIC CO LTD |
发明人 |
TERADA NORIHIRO;SANO KEIICHI;AYA YOICHIRO |
分类号 |
G02F1/136;G02F1/1368;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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