| 摘要 |
PURPOSE:To provide a highly reliable layer insulation film by providing an electric wiring layer formed on a semiconductor substrate, an SOG film formed thereon and an SOG film which is formed on a surface thereof and is thicker than the SOG film. CONSTITUTION:An item wherein an n-channel MOSFET is formed using a semiconductor substrate as a starting material is illustrated as a substrate 9 inclusively. An electric wiring layer 10 is formed in a surface of an insulation film 8 formed on the substrate 9. An SOG film 13 formed on the electric wiring layer 10 and an SOG film 14 which is formed on a surface of the SOG film 13 and is thicker than the SOG film 13 are provided. The double layer structure SOG films 13, 14 are applied as a layer insulation film of the electric wiring layer 10. Therefore, the SOG film 13 of a lower layer buried in a recessed part, etc., of the electric wiring layer 10 becomes thick enough to attain satisfactory effect of thermal treatment and highly reliable SOG films 13, 14 can be provided. |
