发明名称 |
Verfahren zur Herstellung mikroelektronischer Gehäuse mit Kupfersubstrat |
摘要 |
Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper surface core (1), e.g., a copper-Invar-copper core, with a polymeric dielectric film (5). The method includes removing copper oxide from the copper surface (2,3) of the metallic core or layer. After this step an adhesion layer (4,4'), as a chromium layer, a nickel layer, or chromium and nickel or chromium and copper bilayers, is sputter deposited onto the copper surface of metallic core or layer. A polymeric dielectric film (5) is then applied atop the metallic adhesion layer. <IMAGE> |
申请公布号 |
DE69207250(D1) |
申请公布日期 |
1996.02.15 |
申请号 |
DE1992607250 |
申请日期 |
1992.03.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US |
发明人 |
CHEN, PEI C., ENDICOTT, N.Y. 13760, US;WEALE, RICHARD D., OWEGO, N.Y. 13827, US |
分类号 |
H01L23/12;C23C14/02;C23C14/16;H01L21/48;H01L23/14;H05K1/05;H05K3/00;H05K3/38;H05K3/44;(IPC1-7):C23C14/12;C23F1/18 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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