发明名称
摘要 PURPOSE:To perform the operation of an ion source in an ion beam exposure mask itself by forming a nitride film in a figure state on a membrane film made of a Pd film. CONSTITUTION:A Pd film 1 is bonded to a frame 3 made of metal, glass or ceramics, and a PdN 2 is formed in a figure state on the film 1. When the film 1 is used as a membrane film, the film 1 is heated from the front surface, for example, while slightly applying a back pressure to transmit hydrogen gas and to stop hydrogen transmitted through the film 1 by the nitride film 2 formed in the film 1. That is, the film 2 is formed in the figure state to exhaust the hydrogen gas in the figure state from between the figures of the film 2, and the film 1 is applied to a positive to radiate hydrogen ions in a figure state. Thus, an ion beam exposure mask itself can be operated as an ion source.
申请公布号 JPH0815136(B2) 申请公布日期 1996.02.14
申请号 JP19870007532 申请日期 1987.01.16
申请人 发明人
分类号 G03F1/00;G03F1/20;H01L21/027;H01L21/30 主分类号 G03F1/00
代理机构 代理人
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