Method of chemical vapor deposition and reactor therefor

摘要

A method of a chemical vapor deposition and the reactor therefor according to the present invention uses or has a cold-wall type reaction chamber 3 equipped with a gas inlet 5 for a reactant raw material gas(es)4 at one end and a gas outlet 6 for a reaction gas at the other end, installed in roughly horizontal, holding a semiconductor substrate(s) 1 in the chamber 3 with a main surface of the substrate 1 aligned in roughly horizontal, flowing a reactant raw material gas(es) 4 in roughly horizontal in one direction ,and growing a semiconductor crystalline thin film 2 on the heated semiconductor substrate(s) 1, and the substrate 1 is arranged in a range of (L + W ) from the gas inlet 5 of the reactant raw material gas(es) 4 in the flowing direction and in a location of W/G ratio is 15 or larger, where W indicates an internal width of the reaction chamber 3, L indicates a distance from the gas inlet 5 of the reactant raw material gas(es) 4 to the leading edge of the substrate 1 located at the most upstream position on the gas inlet side and G indicates a distance between the main surface of the substrate 1 and the ceiling thereabove. $$