发明名称 |
LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
摘要 |
An embodiment of the present invention is a method of fabricating power and non-power devices on a semiconductor substrate, the method comprising: forming alignment marks in the substrate (100); introducing a dopant of a first conductivity type into the substrate to form high-voltage tank regions (103); annealing the dopants (105); introducing dopants of the first conductivity type and a second conductivity type in a region in the high-voltage tank region (109); annealing the dopants of the first and the second conductivity type to form a second region within a third region, both within the high-voltage tank region, due to the different rates of diffusion of the dopants (110); and forming gate structures after the annealing of the dopants of the first and second conductivity types (122).
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申请公布号 |
US5491105(A) |
申请公布日期 |
1996.02.13 |
申请号 |
US19940303792 |
申请日期 |
1994.09.09 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SMAYLING, MICHAEL C.;TORRENO, JR., DECEASED, MANUEL L.;FALESSI, GEORGES |
分类号 |
H01L21/324;H01L21/336;H01L21/8234;H01L21/8247;H01L27/06;H01L27/088;H01L27/115;H01L29/06;H01L29/08;H01L29/735;H01L29/78;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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