| 摘要 |
PURPOSE:To provide a photoelectric conversion device capable of improving a release voltage and a curve factor in characteristics of a solar cell, by carrying out oxide-plasma surface treatment on a transparent oxide electrode. CONSTITUTION:A glass substrate 10 with a transparent electrode made of tin oxide 11 is put in a substrate take-in and take-out chamber, and heated in a vacuum state. After the board 10 is moved in an oxide plasma treatment chamber, in which oxygen of 50cc/min is fed as a raw gas, the substrate 10 is surface-treated at a board temperature of 100 deg.C with high-frequency of 0.5W/cm<2> under a pressure of 0.2 Torr for one minute. In an i-layer forming chamber, a monosilane gas of 10cc/min is fed for the substrate 10, and a substantially intrinsic amorphous silicon semiconductor layer 12 with a thickness of 100nm is formed at temperature of 200 deg.C under a pressure of 0.10 Torr in a plasma CDV method. In measurement of photoelectric characteristics, a release terminal voltage is 0.45V, while a very high curve factor of 0.65 can be obtained. |
