SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To realize a semiconductor device having a polycide gate structure which is not affected by the mutual diffusion of impurities and to realize its manufacturing method. CONSTITUTION:A semiconductor device has a structure wherein a nitrogen-doped amorphous silicon layer 10 is sandwiched between a phosphorus-doped polysilicon layer 8 and a boron-doped poly-silicon layer 9 and a tungsten silicide layer 11 in a polycide gate structure and impurities in the phosphorus-doped polysilicon layer 8 and the boron-doped polysilicon layer 9 are not diffused to each other through the tungsten silicide layer 11.