EDGE EMISSION TYPE LED, MANUFACTURE OF EDGE EMISSION TYPE LIGHT EMITTING ELEMENT, AND METHOD FOR MEASURING LIGHT EMITTING CHARACTERISTIC OF EDGE EMISSION TYPE LIGHT EMITTING ELEMENT

摘要

PURPOSE:To provide a method in which dicing shocks are hardly transmitted to an end emission type LED array at the time of manufacturing the LED array by using a dicing technique. CONSTITUTION:A recessed section 29 having a depth deeper than the phase boundary of a p-n junction and sloped side walls is formed by etching at, at least, the one on the surface of a semiconductor wafer facing the light emitting edge of a light emitting element of the parts to be diced on the surfaces of the semiconductor wafer. After the section 29 is formed, the semiconductor wafer is diced from the bottom of the section 29 at a dicing with W2 which is narrower than the bottom width W1 of the section 29.