| 摘要 |
<p>A method for making a photovoltaic material or device, the resulting material or device, and a solar cell comprising such a material or device, are disclosed. The method comprises processing the rear surface of a single-crystal silicon chip region, wafer or slice to form a rear field as well as electrical contact areas or points, then processing the front surface to form a surface emitter thin film, a shallow p-n junction and at least one very thin highly doped continuous planar substructure buried in the emitter and/or the base and provided with a number of crystalline and electric interfaces, particularly two L-H interfaces and two crystalline heterointerfaces, and finally heat treating said chip region, wafer or slice to form, in said emitter film, a heterostructure of different materials or of materials having different crystallinities, coinciding with the selected doping profile.</p> |
