| 摘要 |
<p>An image detector (1, 1a) has an array (2) of sensors (3) formed from layers of material provided on a substrate (4) and separated from a biasing electrode (5) by a radiation conversion layer (6) in which charge carriers are generated in response to incident radiation. Each sensor has a collecting electrode (7a, 7b) for colecting charge carriers generated in the radiation conversion layer (6), a capacitor (c) for storing charge and a switching element (8) having at least first and second electrodes (9 and 10) with one (10) of the first and second electrodes being coupled to the collecting electrode (7a, 7b) for enabling charge carriers stored at the sensor (3) to be read out. Each collecting electrode (7a, 7b) extends laterally beyond the associated switching element (8) on an insulating layer (12a, 12b) provided over the switching elements to form the associated capacitor (c) with an underlying reference electrode (12a, 12b) separated from the collecting electrode (7a, 7b) by the insulating layer (11a, 11b).</p> |
