发明名称 Negative resists with high thermal stability comprising end capped polybenzoxazole and bisazide
摘要 Cost-effective, negative resists having high thermal stability based on oligomeric and/or polymeric polybenzoxazole precursors are disclosed. Also disclosed are resist solutions having a high level of storage stability when they contain a photoactive component in the form of a bisazide and when the polybenzoxazole precursors are hydroxypolyamides having the following structure: <IMAGE> +TR <IMAGE> where R, R*, R1, R1* and R2 are aromatic groups, R3 is an aromatic group or a norbornene residue, and wherein n1, n2 and n3, are defined as follows: n1=1 to 100, n2 and n3=0 or n1 and n2=1 to 100, n3=0 or n2=1 to 100, n1 and n3=0 or n1, n2 and n3=1 to 100 (with R NOTEQUAL R* or R1 NOTEQUAL R1* or both) or n1 and n3=1 to 100, n2=0 (with R NOTEQUAL R* or R1 NOTEQUAL R1* or both), on the condition that: n1+n2+n3>/=3.
申请公布号 US5486447(A) 申请公布日期 1996.01.23
申请号 US19940330227 申请日期 1994.10.27
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HAMMERSCHMIDT, ALBERT;KUEHN, EBERHARD;SCHMIDT, ERWIN
分类号 G03F7/008;C08G73/22;C08L71/00;C08L79/06;G03F7/012;G03F7/037;G03F7/038;H01L21/027;(IPC1-7):G03F7/012;G03F7/40 主分类号 G03F7/008
代理机构 代理人
主权项
地址