摘要 |
Cost-effective, negative resists having high thermal stability based on oligomeric and/or polymeric polybenzoxazole precursors are disclosed. Also disclosed are resist solutions having a high level of storage stability when they contain a photoactive component in the form of a bisazide and when the polybenzoxazole precursors are hydroxypolyamides having the following structure: <IMAGE> +TR <IMAGE> where R, R*, R1, R1* and R2 are aromatic groups, R3 is an aromatic group or a norbornene residue, and wherein n1, n2 and n3, are defined as follows: n1=1 to 100, n2 and n3=0 or n1 and n2=1 to 100, n3=0 or n2=1 to 100, n1 and n3=0 or n1, n2 and n3=1 to 100 (with R NOTEQUAL R* or R1 NOTEQUAL R1* or both) or n1 and n3=1 to 100, n2=0 (with R NOTEQUAL R* or R1 NOTEQUAL R1* or both), on the condition that: n1+n2+n3>/=3.
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