| 摘要 |
PURPOSE:To provide a solar battery with less re-coupling of carries and high photoelectric conversion efficiency. CONSTITUTION:An n-type layer is formed on a p-type crystal silicon substrate 5. A p-type diamond thin film 6 is provided on a side opposite to the junction. The diamond thin film 6 has an energy forbidden band width greater than that of the p-type crystal silicon substrate 5. In addition, the diamond thin film 6 has an impurity density higher than that of the p-type crystal silicon substrate 5. Therefore, on the interface between the diamond thin film 6 and the p-type silicon substrate 5, a high potential barrier can be produced. The diamond thin film 6 deteriorate little in film quality even with high density of impurity contained therein. Therefore, the diamond thin film 6 can extract majority of carriers from the p-type silicon substrate 5 with higher efficiency. |
