| 摘要 |
PURPOSE:To microscopically form the memory cell of a semiconductor device and to secure alpha ray resisting strength by a method wherein an n-type diffusion layer is formed on the lower part of the region where the gate electrode wiring of a driving MOSFET, extended to the side of a storage node, is formed. CONSTITUTION:A P-type well layer 1 is formed on the main surface of a semiconductor substrate, each element forming region is separated by a LOCOS element isolation film 3, and a P<+> buried layer 2 is formed after formation of the LOCOS element isolation film 3. This P<+> buried layer 2 functions as a channel stopper on the lower part of the LOCOS element isolation film 3, and the layer 2 functions' to strengthen alpha-ray resisting property. Then, an N-type diffusion layer 19 is formed on the lower part of the element isolation film 3 which becomes the formation region of a wiring coming from the gate electrode 6a of a driving MOSFETQd 2. As a result, a P-N junction capacitor of an N-type diffusion layer 19 and a P<+> type buried layer 2 are formed under the wiring part of the gate electrode 6a, alpha-ray-resisting strength can be secured, and the microscopical formation of a memory cell can be accomplished. |
