LSI FOR DEFECT REMEDY AND MEMORY DEVICE

摘要

PURPOSE:To provide an LSI which can remedy a defect of a mounted DRAM and to provide a memory device which can remedy the defect of the DRAM generated after assembly. CONSTITUTION:The LSI for defect remedy consists of an interface part for the same address and control with DRAMs, an input/output interface corresponding to the memory device consisting of plural DRAMs, a nonvolatile storage circuit 3 which stores the chip addresses of the DRAMs and a defect address of an X system, a RAM part 4 for redundancy remedy consisting of an SRAM which has a word line selected with a comparison matching signal between an inputted X address and the defect address of the storage circuit and a column selected with a Y address signal, a selection part 6 which connects the data input/output bus of the RAM part for redundancy to a data input/output terminal, a data input/output part 7 which activates an input/output circuit corresponding to the selection, and a mask part 8 which outputs a signal for placing the output terminal of a DRAM judged to be defective in a high-impedance state.