| 摘要 |
PURPOSE:To provide a manufacturing method for semiconductor devices capable of manufacturing GaAs light-emitting diodes having high external luminous efficiency. CONSTITUTION:A manufacturing method for semiconductor GaAs light emitting diodes comprises the steps of etching semiconductor devices separated by dicing with a mixed solution containing phosphoric acid and aqueous hydrogen peroxide, performing etching with a mixed solution containing aqueous ammonia and aqueous hydrogn peroxide, and dipping them in a boiling pure water. This manufacturing method makes it possible to remove etchants, oxide films, impurities, etc., remaining on chip surfaces, and obtain GaAs light-emitting diodes having external luminous efficiency improved sharply compared to those used before. |
