发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the reliability with the dielectric strength made high, by preventing an inversion layer from being generated at the low-impurity density side of a PN junction by providing a channel stopper near the moat groove of the edge of the PN junction or mesa part.
申请公布号 JPS5414677(A) 申请公布日期 1979.02.03
申请号 JP19770079873 申请日期 1977.07.06
申请人 发明人
分类号 H01L29/73;H01L21/316;H01L21/331;H01L23/31 主分类号 H01L29/73
代理机构 代理人
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