| 摘要 |
A sputtering apparatus deposits a material layer on a substrate (12) in multiple sub-layers to provide a desired uniform consistency in the deposition layer. The apparatus includes means for positioning the substrate in at least two positions (16,18) with respect to a sputtering target (14), and the material layer is formed on the substrate in part while the substrate is in the first position and in part while the substrate is in the second position. The two positions may be provided by moving the substrate and/or the target to change the spacing therebetween, or two chambers may be provided which locate the substrate at different positions from the target. In one of the positions (16), the target (14) and wafer (12) are separated by a long throw distance, which allows for the filling of narrow or high aspect ratio holes in the upper layer of the substrate but also deposits an uneven layer (40) across the face of the substrate. In the second position (18), the substrate (12) is positioned adjacent the target (14), and a deposition layer (43) complementary to that provided in the long throw position is formed on the substrate to provide a uniform layer across the face of the substrate. <MATH> |
