| 摘要 |
PURPOSE:To simplify the removal of impurities such as iron by including a specific heat-treatment process in the process for the production of a reaction sintered silicon carbide comprising a specific treatment to silicify the C of a formed article composed of SiC and C. CONSTITUTION:A reaction sintered silicon carbide is produced by impregnating metallic Si in a formed article composed of SiC and C in a nonoxidizing atmosphere at a temperature higher than the melting point of Si and silicifying C. Preferably a plural number of heattreating steps to remove impurities by heating at 1600-2100 deg.C, preferably 1650-2000 deg.C in vacuum are included in the above production process. |
