| 摘要 |
PURPOSE:To prevent a defect caused by the positional shift between a contact hole and the pattern of a storage electrode in a semiconductor device, for example, at the time of patterning the storage electrode. CONSTITUTION:A TEOS 16 and a first polysilicon are deposited sequentially on the source-drain 15 on the semiconductor substrate side. The outline pattern of each film and a contact hole 20 are then patterned using a common mask thus forming a storage electrode 18 and the contact hole 20. A first side wall 21 of second polysilicon is then formed in the contact hole 20 in order to conduct the storage electrode 18 and the source-drain 15. At the same time, a second side wall is formed on the outer periphery of the storage electrode 18 followed by formation of a capacitive insulating film 23 and a cell plate 24. Since the outline pattern of the storage electrode 18 and the contact hole 20 are formed using a same mask, pattern shift due to the positional shift of mask is eliminated and thereby occurrence of defect is prevented. |
