发明名称 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
摘要 forming a MOSFET insulator on a semiconductor substrate; forming a resist pattern by passivating the resist on a silicon layer after forming the silicon layer on the MOSFET insulator layer; oxidating the front side of the semiconductor by eliminating the resist.
申请公布号 KR960000362(B1) 申请公布日期 1996.01.05
申请号 KR19910024485 申请日期 1991.12.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, BYUNG - HONG;SONG, JOO - HO;JANG, TAE - KYU;JANG, HYUN - KEUN
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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