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发明名称
NITRIDED SILICON DIOXIDE LAYERS FOR SEMICONDUCTOR INTEGRATED CIRCUITS
摘要
申请公布号
KR960000378(B1)
申请公布日期
1996.01.05
申请号
KR19860070526
申请日期
1986.08.05
申请人
AMERICAN TELEPHONE & TELEGRAPH COMPANY
发明人
CHUAN - CHUNG, CHANG;DAWON, KAHUG;AVI, KAMGAR;LOUIS CARL, PARRILLO
分类号
H01L29/78;H01L21/314;H01L21/318;H01L21/336;(IPC1-7):H01L21/314
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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