摘要 |
PURPOSE:To facilitate directional etching and realize pattern processing having a highly accurate rectangular cross-section without undercut by forming a protective film for preventing lateral etching by radicals on a pattern side wall of a material to be processed in ECR-etching of an X-ray mask absorbing body. CONSTITUTION:Manufacture of an X-ray mask absorbing body uses chlorine gas as etching as and oxygen as protective film formation gas for preventing undercut of a pattern side wall of a material to be processed. An apparatus for manufacturing the X-ray mask absorbing body comprises a mechanism which respectively introduces the chlorine gas as etching gas to a plasma generation chamber and oxygen gas as protective film formation gas to an etching chamber. |