发明名称
摘要 PURPOSE:To facilitate directional etching and realize pattern processing having a highly accurate rectangular cross-section without undercut by forming a protective film for preventing lateral etching by radicals on a pattern side wall of a material to be processed in ECR-etching of an X-ray mask absorbing body. CONSTITUTION:Manufacture of an X-ray mask absorbing body uses chlorine gas as etching as and oxygen as protective film formation gas for preventing undercut of a pattern side wall of a material to be processed. An apparatus for manufacturing the X-ray mask absorbing body comprises a mechanism which respectively introduces the chlorine gas as etching gas to a plasma generation chamber and oxygen gas as protective film formation gas to an etching chamber.
申请公布号 JPH07123106(B2) 申请公布日期 1995.12.25
申请号 JP19910013479 申请日期 1991.02.04
申请人 发明人
分类号 G03F1/22;H01L21/027;H01L21/30;H01L21/302;H01L21/3065 主分类号 G03F1/22
代理机构 代理人
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