| 摘要 |
<p>Silicon carbide is produced in two steps in that silicon dioxide and a carbon source in a first step is reacted at a temperature in the range of 1500-1800 °C, whereby the silicon dioxide and the carbon source react to form β-silicon carbide. The resulting β-silicon carbide formed is subsequently treated at a temperature of 1800-2300 °C for conversion of the β-silicon carbide into the desired end product, via α-silicon carbide.</p> |
