Thermoelectric device and a method of manufacturing thereof

摘要

To provide a thermoelectric device (11) and a method of making thereof which is small, thin and capable of increasing a number of thermoelectric material chips (13, 14) per unit area. Respective thermoelectric material wafers (40) of P-type and N-type are bonded to substrates (42) for P-type and N-type provided with electrodes (43) each producing a gap therebetween. The thermoelectric material wafer bonded to the substrate is formed into the substrate bonded with thermoelectric material chips by cutting and eliminating unnecessary portions by utilising the gap. The substrates respectively bonded with P-type thermoelectric material chips and N-type thermoelectric material chips are opposed and distal ends of the chips and the electrodes on the substrate are bonded to thereby form PN junctions. Further, structures (44) are provided at surroundings of bonding portions on the substrate for positioning the bondings and for preventing a bonding material from oozing. <IMAGE>