发明名称 |
Method for producing an active matrix substrate |
摘要 |
A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.
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申请公布号 |
US5474941(A) |
申请公布日期 |
1995.12.12 |
申请号 |
US19930154116 |
申请日期 |
1993.11.18 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MITANI, YASUHIRO;TANAKA, HIROHISA;MORIMOTO, HIROSSHI;YAMAMOTO, TOMOHIKO |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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