| 摘要 |
PURPOSE:To form a connection hole, in a self-alignment manner, in the region where an upper and a lower wiring patterns overlap with each other, by giving sensitivity difference to a photoresist coating film, between one region where the trench part of a lower layer wiring pattern and that of an upper layer wiring pattern overlap with each other and the other region. CONSTITUTION:After an interlayer insulating film 3 is patterned, and a trench part 5 similar to an upper layer wiring pattern 11 is formed in the direction rectangular to a lower wiring pattern 2, a wafer surface is flattened by a photoresist coating film. An aperture region M which can be projected on a wafer is exposed to light, via a photomask larger than the overlapping region A of the lower wiring pattern 2 and the trench part 5. Sensitivity difference due to the thickness of the photoresist coating film and the intensity of light reflected from a base layer is generated between the region A and its peripheral regions B, C. Thereby an aperure E can be formed in a self-alignment manner, in the phtoresist coating film in the region where the lower wiring pattern 2 and the trench part 5 overlap with each other. |
