Light emission from rare-earth element-doped CaF2 thin films

摘要

By growing semi-insulating CaF2 films (296) on a silicon substrate (240), forming superlattice structures (260) made of CaF2:Nd and other semiconductor layers (294) and by associating a co-dopant with Nd in the CaF2 films photoluminescence efficiency of CaF2 films is increased. This permits using electrons to produce photons and controlling optoelectronic devices using CaF2 films through voltage variation.