发明名称 Semiconductor memory device
摘要 Herein disclosed is a semiconductor integrated circuit for testing test data of two kinds of non-inverted and inverted statuses of all bits by itself with a prospective data of one kind to compress and output the test results. The semiconductor integrated circuit includes a decide circuit 25 for deciding a first status, in which the prospective data latched by a pattern register and the read data of a memory cell array are coincident, a second status, in which the read data is coincident with the logically inverted data of the prospective data, and a third statuses other than the first and second statuses through an exclusive OR gate to generate signals of 2 bits capable of discriminating the individual statuses. These statuses are informed to the outside of the semiconductor integrated circuit in accordance with high- and low-levels and a high-impedance.
申请公布号 US5475692(A) 申请公布日期 1995.12.12
申请号 US19950407986 申请日期 1995.03.22
申请人 HITACHI, LTD.;HITACHI VLSI ENGINEERING CORP. 发明人 HATANO, SUSUMU;KITANO, JUN;NISHIMOTO, KENJI;IKENAGA, SHIN'ICHI;KAWAMURA, MASAYASU;TAKAHASHI, YASUSHI;WADA, TAKESHI;MISHIMA, MICHIHIRO;YAMAMOTO, FUJIO
分类号 G11C29/10;G11C29/14;G11C29/40;(IPC1-7):G06F11/00 主分类号 G11C29/10
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