| 摘要 |
<p>PURPOSE:To reduce characteristic variations and readily expand to a large area substrate by providing a technique for forming self-adjustably an electric- field mitigation region of a thin film transistor. CONSTITUTION:Gate electrodes 14, 15 of a thin film transistor are formed out of two kinds of metal or a metal compound thin film, and the wiring width of a lower layer gate electrode 14 is finely set by etching for the wiring width of an upper layer gate electrode 15. Thereafter, with the use of the gate electrode as a mask, impurities are implanted in a self-alignment manner into source and drain regions 18 of the thin film transistor. Incidentally, the film thickness of the upper layer gate electrode 15 is controlled when implanting impurities, whereby prevention capability for implanted ions are controlled and a low concentration impurity implanted region 17 is formed upon implantation of impurities into the source and drain regions 18.</p> |
