| 摘要 |
<p>PURPOSE:To provide a liquid display unit high in a manufacturing yield and reliability and excellent in processability and process precision and operation characteristics by eliminating short-circuit between neighboring gate electrodes, separation of an end part of a polycrystalline silicon layer or deterioration of process precision of a thin film transistor. CONSTITUTION:Between an active layer 2 comprising a polycrystalline silicon and a gate insulation film 3 comprising a heat oxide film; and an upper surface of a substrate 1, if a gap caused by heat oxidation occurs, adhesion to a gap of a polysilicon film when thereafter forming a polysilicon film for forming a gate electrode 8 can effectively be prevented by a method wherein a second oxide film 4 is provided in the gap. As the such-incased second oxide film 4 is an oxide film excellent in an insulation characteristic, if respectively connecting with the neighboring gate electrode 8, they can be prevented from short-circuiting.</p> |
