| 摘要 |
PURPOSE: To provide a forming method of a metal wiring layer having an aluminum anti-oxidizing film which simplifies a process and improves the level of integration and electric characteristics of an element. CONSTITUTION: This method contains a process for forming a copper metal layer 12 on a substrate 11, and a process for forming an anti-oxidizing film by vapor-depositing an aluminum thin film on the exposed surface of the copper metal layer, by using a selective CVD method. The aluminum thin film is formed to be at most 100Åthick, and turned into Al2 O3 in the atmospheric air or at the time of heat treatment. Thereby copper is stably prevented from being oxidized. Further, a film 14 for preventing copper from diffusing in the substrate is contained between the substrate and the copper metal wiring layer.
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