| 摘要 |
PURPOSE:To obtain a light-emitting element in which an undesirable crystal face does not have a bad influence on an element characteristic even when the undesirable crystal face is formed on a compound semiconductor crystal layer by a method wherein a protrusion region is extracted from a light-emitting region near a light-radiating face in the <-2, 1, 1> direction of a compound semiconductor substrate. CONSTITUTION:A light-emitting element is composed of a compound semiconductor crystal layer 20 formed on a compound semiconductor substrate, and the crystal layer 20 is composed of a light-emitting region 22 and of protrusion regions 24, 26. The protrusion regions 24, 26 are extended from the light-emitting region 22 near light-emitting surface 22B, 22D in the [-2, 1, 1]s direction of the compound semiconductor substrate. (-1, 0, -1)c faces 24A, 26A and (-1, -1, 0)c faces 24B, 26B are formed in end-part regions in the protrusion regions 24, 26 in the [-2, 1, 1]s direction of the compound semiconductor substrate. However, the crystal faces 24A, 24B, 26A, 26B are away from the light-emitting surface 22B, 22D in the light-emitting element, they do not have a bad influence on the surfaces. |
