| 摘要 |
<p>PURPOSE: To provide a system and a method which obtain wafer temperature control at the time of SIMOX process and obtain uniformity in oxygen implantation in a substrate. CONSTITUTION: An implantation system 10 is provided with the following; an oxygen beam generator 22, a wafer chuck 28 capable of operating to hold a semiconductor wafer 26 in a right position where an oxygen beam collides with one surface of the wafer 26, a rotary drum 12 holding the wafer chuck 28, which is equipped with a heat reflector positioned in the rear of a wafer 26, and mechanism 30, 32 for rotating the wafer chuck 28 in the case of implantation process, for ensuring uniformity of the implantation process.</p> |
