Method for evaluating epitaxial layers and test pattern for process evaluation.

摘要

In a method for evaluating thickness of a semiconductor layer (20) epitaxially growing on a main surface of a substrate (1), a plurality of stripe-shaped ridges (12) extending in a prescribed direction are formed on the surface of the substrate, and a semiconductor layer (20) is epitaxially grown on the surface of the substrate including the stripe-shaped ridges while irradiating the stripe-shaped ridges with light (21) and monitoring diffracted light (22,23) from the stripe-shaped ridges to evaluate the thickness of the epitaxially growing semiconductor layer. Therefore, the thickness of the epitaxial layer is evaluated with high precision during the epitaxial growth process.