| 发明名称 |
An integrated device having MOS transistors which enable positive and negative voltage swings. |
| 摘要 |
The semiconductor circuit integrated with CMOS circuits contains a p-channel type MOSFET as an output transistor. The drain of the output transistor is connected to a voltage source below ground potential and the source is connected to a voltage source above ground potential. |
| 申请公布号 |
EP0634795(A3) |
申请公布日期 |
1995.12.06 |
| 申请号 |
EP19940305069 |
申请日期 |
1994.07.11 |
| 申请人 |
XEROX CORPORATION |
发明人 |
MOJARADI, MOHAMAD M.;LERMA, JAIME;VO, TUAN;BUHLER, STEVEN A. |
| 分类号 |
H01L29/78;H01L27/02;H01L27/092;H03K17/30 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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