发明名称 POST-TREATMENT OF PATTERN OF PRECURSOR OF POLYIMIDE
摘要 PURPOSE:To provide a method for post-treating a pattern by which the creasing of a pattern obtd. by developing or etching a precursor of polyimide is prevented when the pattern is finally heated to carry out imidation. CONSTITUTION:A coating film of a precursor of polyimide including polyamic acid and its hemiester is developed with an alkaline aq. soln. or is chemically etched to form a pattern and an acidic chemical soln. of oxalic acid, etc., is brought into contact with the pattern, preferably only the surface layer of the pattern by dipping or other method.
申请公布号 JPH07311468(A) 申请公布日期 1995.11.28
申请号 JP19940103808 申请日期 1994.05.18
申请人 NITTO DENKO CORP 发明人 OMOTE TOSHIHIKO
分类号 G03F7/40;H01L21/027;H01L21/56;H01L23/29;H01L23/31;(IPC1-7):G03F7/40 主分类号 G03F7/40
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