| 摘要 |
<p>PURPOSE:To improve coverage of each film, prevent irregularity in a rubbing process, and exclude disconnection and short-circuit in each film, by working side walls of all constituting films in taper types, and laminating the films. CONSTITUTION:When constituting films are worked by using a dry etching method, a film 42 used in the upper layer part where the etching rate becomes high is in an overetching state, while a film 41 used in the lower layer part where the etching rate becomes small is etched. In the film 42 used in the upper layer part, etchback progresses in the whole part, during the etching of the film 41 used in the lower layer part. As the result, the side wall of the film 42 used in the upper layer part constitute a taper type etching form. The thickness of each film of a multilayered film constituting a TFT is adjusted and etching is performed, so that a taper form whose side wall has a desired taper angle is obtained. Thereby coverage of each film is improved, and disconnection and short-circuit in each film can be excluded.</p> |
