| 摘要 |
PURPOSE: To provide an improved low-leak device junction, without victimizing the device scalability or deteriorating the device performance. CONSTITUTION: An interlayer dielectric layer 28 is partly etched off to expose at least a junction region 26, a dielectric layer is formed on one exposed surface of this region 26, a semiconductor device 10 is annealed in an N-contg. atmosphere to more diffuse part 34 of the region 26, the dielectric layer can be removed to form contact plugs 36 at the exposed region, and a metal interconnection layer 38 to be connected to the junction region 26 through the contact plug 36 can be formed.
|
